SiC

SEMIKRON offers Full Silicon Carbide Power Modules in MiniSKiiP, SEMITOP and SEMITRANS housings. By using SiC MOSFETs of the leading suppliers highest output power and power densities are reached in combination with high switching frequencies, lowest losses and maximum efficiency.

Through the increase of switching frequency the passive filter components can be reduced drastically. Power losses are reduced at the same time which lead to smaller heat sinks and less cooling effort in general. Both benefits result in a major decrease of system cost.

The Full Silicon Carbide Power Modules are available from 20A to 500A in 1200V, with and without anti-parallel free-wheeling Schottky diode.

Covered topologies are 6-packs in classic configuration but also with split output to enable a flexible adaption to your application. Further H-bridges, half bridges and boost converters including a bypass diode are available.

SEMIKRON offers Hybrid Silicon Carbide Power Modules in MiniSKiiP, SEMITRANS, SEMiX 3 Press-Fit and SKiM63/93. Latest IGBT technology is combined with SiC Schottky diodes of the leading suppliers to increase the switching frequency and reduce power losses at the same time.

The hybrid silicon carbide power modules are available from 50A to 600A in 1200V. Covered topologies are 6-packs and half bridges.

SiC Schottky free-wheeling diodes have virtually no switching losses and reduce the turn-on losses of the IGBT drastically. With these effects higher switching frequencies can be reached in the same module package which efficiently lowers the filter efforts on the output side of e.g. solar inverters, UPS systems or high frequency power supplies.

Additionally higher output powers compared to standard silicon power modules can be realized.